Datasheet > STW56N65M2-4

STW56N65M2-4

更新时间： 2023-12-20 18:44:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	699K
描述
N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，TO247-4封装

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STW56N65M2-4 数据手册

STW56N65M2-4

N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2

Power MOSFET in a TO247-4 package

Datasheet

production data

Features

Order code

V_DS

R_DS(on)max

I_D

STW56N65M2-4

650 V

0.062 ꢀ

49 A

• Excellent switching performance thanks to the

extra driving source pin

• Extremely low gate charge

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

ꢃ

ꢂ

ꢁ

ꢀ

• Zener-protected

72ꢀꢁꢂꢃꢁ

Applications

• Switching applications

Figure 1. Internal schematic diagram

'UDLQꢄꢀꢅ

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics, rendering

it suitable for the most demanding high efficiency

converters.

*DWHꢄꢃꢅ

3RZHU

VRXUFHꢆꢄꢁꢅ

'ULYHU

VRXUFHꢆꢄꢂꢅ

$0ꢀꢇꢀꢈꢈYꢁ=

Table 1. Device summary

Order code

Marking

56N65M2

Package

Packaging

STW56N65M2-4

TO247-4

Tube

December 2014

DocID027307 Rev 1

1/12

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...12

下载PDF

与STW56N65M2-4相关器件

型号	品牌	描述	获取价格	数据表
STW56NM60N	STMICROELECTRONICS	N-channel 600 V, 0.05 Î©, 45 A TO-247 MDmeshâ	获取价格
STW57N65M5	STMICROELECTRONICS	N-channel 650 V, 0.056 Î© typ., 42 A MDmeshâ	获取价格
STW57N65M5-4	STMICROELECTRONICS	N-channel 650 V, 0.056 Î© typ., 42 A, MDmeshâ	获取价格
STW58N60DM2AG	STMICROELECTRONICS	汽车级N沟道600 V、0.052 Ohm典型值、50 A MDmesh DM2功率MOS	获取价格
STW58N65DM2AG	STMICROELECTRONICS	汽车级N沟道650 V、0.058 Ohm典型值、48 A MDmesh DM2功率MOS	获取价格
STW5C2N	DIALIGHT	DuroSite? LED Area Light	获取价格