Datasheet > STW56N65M2-4

STW56N65M2-4

更新时间： 2023-12-20 18:44:09

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	699K
描述
N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，TO247-4封装

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STW56N65M2-4 数据手册

Electrical characteristics

STW56N65M2

Electrical characteristics

(T_C= 25 °C unless otherwise specified)

Table 5. On /off states

Test conditions

Symbol

Parameter

Drain-source

Min.

Typ.

Max. Unit

V_(BR)DSS

I_D= 1 mA, V_GS= 0

V_DS= 650 V

650

breakdown voltage

Zero gate voltage

µA

I_DSS

drain current (V_GS= 0) V_DS= 650 V, T_C= 125 °C

100

Gate-body leakage

V_GS= ± 25 V

I_GSS

± 10

current (V_DS= 0)

V_GS(th)

R_DS(on)

Gate threshold voltage V_DS= V_GS, I_D= 250 µA

Static drain-source on-

V_GS= 10 V, I_D= 24.5 A

resistance

0.049 0.062

ꢀ

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

C_iss

Input capacitance

Output capacitance

3900

160

V_DS= 100 V, f = 1 MHz,

V_GS= 0

C_oss

Reverse transfer

capacitance

C_rss

2.8

838

4.6

ꢀ

Equivalent Output

Capacitance

(1)

C_o(er)

V_GS= 0, V_DS= 0 to 520 V

f = 1 MHz open drain

Intrinsic gate

resistance

R_G

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 520 V, I_D= 49 A,

V_GS= 10 V, (see Figure 15)

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

4/12

DocID027307 Rev 1

1 2 345 6 7...12

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