5秒后页面跳转
STW28NM60ND PDF预览

STW28NM60ND

更新时间: 2024-11-21 21:04:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
22页 1666K
描述
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

STW28NM60ND 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:43 weeks 2 days
风险等级:2.29雪崩能效等级(Eas):50 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):23 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):92 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW28NM60ND 数据手册

 浏览型号STW28NM60ND的Datasheet PDF文件第2页浏览型号STW28NM60ND的Datasheet PDF文件第3页浏览型号STW28NM60ND的Datasheet PDF文件第4页浏览型号STW28NM60ND的Datasheet PDF文件第5页浏览型号STW28NM60ND的Datasheet PDF文件第6页浏览型号STW28NM60ND的Datasheet PDF文件第7页 
STB28NM60ND, STF28NM60ND,  
STP28NM60ND, STW28NM60ND  
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs  
in D²PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet  
-
production data  
Features  
TAB  
VDS @  
2
Order codes  
RDS(on) max  
ID  
3
TJ max.  
1
3
2
1
D2PAK  
STB28NM60ND  
STF28NM60ND  
STP28NM60ND  
STW28NM60ND  
TO-220FP  
TAB  
650 V  
0.150  
23 A  
3
3
2
2
1
1
Intrinsic fast-recovery body diode  
100% avalanche tested  
TO-220  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1. Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
'ꢅꢆꢇĆ7$%ꢈ  
Applications  
Switching applications  
*ꢅꢁꢈ  
Description  
These FDmesh™ II Power MOSFETs with  
6ꢅꢉꢈ  
intrinsic fast-recovery body diode are produced  
using the second generation of MDmesh™  
technology. Utilizing a new strip-layout vertical  
structure, these revolutionary devices feature  
extremely low on-resistance and superior  
switching performance. They are ideal for bridge  
topologies and ZVS phase-shift converters.  
$0ꢀꢁꢂꢃꢄYꢁ  
Table 1. Device summary  
Order codes  
Marking  
Packages  
Packaging  
STB28NM60ND  
STF28NM60ND  
STP28NM60ND  
STW28NM60ND  
D2PAK  
TO-220FP  
TO-220  
Tape and reel  
28NM60ND  
Tube  
TO-247  
May 2014  
DocID024520 Rev 3  
1/22  
This is information on a product in full production.  
www.st.com  
22  

与STW28NM60ND相关器件

型号 品牌 获取价格 描述 数据表
STW29NK50Z STMICROELECTRONICS

获取价格

N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
STW29NK50ZD STMICROELECTRONICS

获取价格

N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Dio
STW2C2N DIALIGHT

获取价格

DuroSite? LED Area Light
STW3040 STMICROELECTRONICS

获取价格

High voltage fast-switching NPN power transistor
STW30N65M5 STMICROELECTRONICS

获取价格

N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V
STW30N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、0.15 Ohm典型值、24 A MDmesh K5功率MOSFET,T
STW30NF20 STMICROELECTRONICS

获取价格

N-channel 200V - 0.065ヘ - 30A - TO-220/TO-247
STW30NM60D STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 0.125 - 30A TO-247 Fast Diode MDmesh MOSFET
STW30NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 0.1 Ω, 25 A, MDmesh? II Powe
STW30NM60ND STMICROELECTRONICS

获取价格

N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/