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STW38NB20 PDF预览

STW38NB20

更新时间: 2024-02-07 14:03:14
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 78K
描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STW38NB20 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247AC包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):550 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):38 A
最大漏极电流 (ID):38 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):180 W
最大脉冲漏极电流 (IDM):152 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW38NB20 数据手册

 浏览型号STW38NB20的Datasheet PDF文件第2页浏览型号STW38NB20的Datasheet PDF文件第3页浏览型号STW38NB20的Datasheet PDF文件第4页浏览型号STW38NB20的Datasheet PDF文件第5页 
STW38NB20  
N - CHANNEL ENHANCEMENT MODE  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 0.065 Ω  
ID  
STW38NB20  
200 V  
38 A  
TYPICAL RDS(on) = 0.052 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
LOW INTRINSIC CAPACITANCE  
GATE CHARGE MINIMIZED  
3
2
REDUCED VOLTAGE SPREAD  
1
DESCRIPTION  
TO-247  
Using the latest high voltage MESH OVERLAY  
process, SGS-Thomson has designed an ad-  
vanced family of power MOSFETs with outstand-  
ing performances. The new patent pending strip  
layout coupled with the Company’s proprietary  
edge termination structure, gives the lowest  
RDS(on) per area, exceptional avalanche and  
dv/dt capabilities and unrivalled gate charge and  
switching characteristics.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLY (SMPS)  
DC-AC CONVERTER FOR WELDING  
EQUIPMENT AND UNINTERRUPTABLE  
POWER SUPPLY AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
200  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
200  
± 30  
38  
V
o
ID  
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
24  
A
IDM()  
Ptot  
Drain Current (pulsed)  
152  
A
o
Total Dissipation at Tc = 25 C  
180  
W
Derating Factor  
1.44  
5.5  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD 38 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/5  
January 1998  

STW38NB20 替代型号

型号 品牌 替代类型 描述 数据表
IRFP260N INFINEON

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Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)
IRFP260 INFINEON

功能相似

Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

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