Datasheet > STW40N95K5

STW40N95K5

更新时间： 2024-11-22 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	761K
描述
N沟道950 V、0.110 Ohm典型值、38 A MDmesh K5功率MOSFET，TO-247封装

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中文翻译

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技术参数
数据手册

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STW40N95K5 技术参数

生命周期：	Active	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	1.54	Samacsys Description：	STMICROELECTRONICS - STW40N95K5 - MOSFET, N-CH, 950V, 38A, TO-247
配置：	Single	最大漏极电流 (Abs) (ID)：	38 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	450 W	子类别：	FET General Purpose Power
表面贴装：	NO	处于峰值回流温度下的最长时间：	NOT SPECIFIED

STW40N95K5 数据手册

STW40N95K5

N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5

Power MOSFET in a TO-247 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max

I_D

P_TOT

STW40N95K5 950 V

0.130 Ω

38 A 450 W



Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener-protected

TO-247

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packaging

STW40N95K5

40N95K5

TO-247

Tube

November 2014

DocID026447 Rev 2

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

中文翻译

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