Datasheet > STW38N65M5-4

STW38N65M5-4

更新时间： 2024-09-29 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	386K
描述
N沟道650 V、0.073 Ohm典型值、30 A MDmesh M5功率MOSFET，TO247-4封装

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STW38N65M5-4 数据手册

STW38N65M5-4

N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5

Power MOSFET in a TO247-4 package

Datasheet - preliminary data

Features

Order code

V_DS@ T_JmaxR_DS(on)max

710 V 0.095 Ω

I_D

STW38N65M5-4

30 A

•

Extremely low R_DS(on)

Low gate charge and input capacitance

Excellent switching performance

100% avalanche tested

Applications

•

High efficiency switching applications:

−

Servers

PV inverters

Telecom infrastructure

Multi kW battery chargers

Figure 1: Internal schematic diagram

Drain(1)

Description

This device is an N-channel Power MOSFET

based on the MDmesh™ M5 innovative vertical

process technology combined with the well-

known PowerMESH™ horizontal layout. The

resulting product offers extremely low on-

resistance, making it particularly suitable for

applications requiring high power and superior

efficiency.

Gate(4)

Driver

source(3)

Power

source(2)

ND1PS2DS3G4

Table 1: Device summary

Marking

Order code

Package

Packaging

STW38N65M5-4

38N65M5

TO247-4

Tube

April 2016

DocID029243 Rev 1

1/13

www.st.com

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...13

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