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STW30NM60ND PDF预览

STW30NM60ND

更新时间: 2024-09-28 04:01:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 290K
描述
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)

STW30NM60ND 技术参数

生命周期:Obsolete零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8Is Samacsys:N
雪崩能效等级(Eas):900 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):25 A
最大漏极电流 (ID):25 A最大漏源导通电阻:0.385 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW30NM60ND 数据手册

 浏览型号STW30NM60ND的Datasheet PDF文件第2页浏览型号STW30NM60ND的Datasheet PDF文件第3页浏览型号STW30NM60ND的Datasheet PDF文件第4页浏览型号STW30NM60ND的Datasheet PDF文件第5页浏览型号STW30NM60ND的Datasheet PDF文件第6页浏览型号STW30NM60ND的Datasheet PDF文件第7页 
STP/F30NM60ND-STW30NM60ND  
STB30NM60ND-STI30NM60ND  
N-channel 600V - 0.11- 25A TO-220/FP/D2PAK/I2PAK/TO-247  
FDmesh™ II Power MOSFET (with fast diode)  
Preliminary Data  
Features  
Type  
VDSS  
RDS(on) Max  
ID  
3
3
STB30NM60ND  
STI30NM60ND  
STF30NM60ND  
STP30NM60ND  
STW30NM60ND  
600V  
600V  
600V  
600V  
600V  
< 0.13Ω  
< 0.13Ω  
< 0.13Ω  
< 0.13Ω  
< 0.13Ω  
25A  
25A  
1
3
2
2
1
1
D2PAK  
TO-220  
25A(1)  
TO-220FP  
25A  
25A  
1. Limited only by maximum temperature allowed  
3
2
1
3
2
The world’s best R  
*in TO-220 amongst  
DS(on)  
1
the fast recovery diode devices  
I2PAK  
TO-247  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in particular  
ZVS phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB30NM60ND  
STI30NM60ND  
STF30NM60ND  
STP30NM60ND  
STW30NM60ND  
30NM60ND  
30NM60ND  
30NM60ND  
30NM60ND  
30NM60ND  
PAK  
PAK  
Tape & reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
November 2007  
Rev 1  
1/15  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
15  

STW30NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STB30NM60ND STMICROELECTRONICS

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N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/
STP30NM60ND STMICROELECTRONICS

功能相似

N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/

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