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STW29NK50ZD PDF预览

STW29NK50ZD

更新时间: 2024-02-03 10:18:12
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 92K
描述
N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET

STW29NK50ZD 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-247AC包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N雪崩能效等级(Eas):500 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):29 A最大漏极电流 (ID):29 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):378 W最大脉冲漏极电流 (IDM):116 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW29NK50ZD 数据手册

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STW29NK50ZD  
N-CHANNEL 500 V - 0.11- 29A TO-247  
Fast Diode SuperMESH™ MOSFET  
PRODUCT PREVIEW  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
P
W
DSS  
DS(on)  
STW29NK50ZD 500 V < 0.15 Ω  
29 A 350 W  
TYPICAL R (on) = 0.11 Ω  
DS  
HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
3
2
1
TO-247  
FAST INTERNAL RECOVERY TIME  
DESCRIPTION  
The Fast SuperMesh™ series associates all ad-  
vantages of reduced on-resistance, zener gate  
protection and very goog dv/dt capability with a  
Fast body-drain recovery diode. Such series com-  
plements the “FDmesh™” Advanced Technology.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
HID BALLAST  
ZVS PHASE-SHIFT FULL BRIDGE  
Table 2: Order Codes  
PART NUMBER  
MARKING  
PACKAGE  
PACKAGING  
STW29NK50ZD  
W29NK50ZD  
TO-247  
TUBE  
Rev. 2  
December 2004  
1/7  

STW29NK50ZD 替代型号

型号 品牌 替代类型 描述 数据表
STW20NK50Z STMICROELECTRONICS

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