Datasheet > STW33N60M2

STW33N60M2

更新时间： 2024-09-29 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
20页	679K
描述
N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，TO-247封装

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中文翻译

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技术参数
数据手册

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STW33N60M2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	16 weeks
风险等级：	2.26	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STW33N60M2 数据手册

STF33N60M2, STI33N60M2

STP33N60M2, STW33N60M2

Datasheet

N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs

in TO‑220FP, I²PAK, TO-220 and TO-247 packages

TAB

Features

@ T

max.

Order codes

STF33N60M2

STI33N60M2

STP33N60M2

STW33N60M2

Package

TO-220FP

I²PAK

Jmax

DS(on)

TO-220FP

I²PAK

650 V

0.125 Ω

26 A

TAB

TO-220

TO-247

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

TO-220

TO-247

(

)

2, TAB

Zener-protected

Applications

(

)

•

Switching applications

LLC converters, resonant converters

(

)

AM15572V1

Description

These devices are N-channel Power MOSFETs developed using the MDmesh M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

Product status links

STF33N60M2

STI33N60M2

STP33N60M2

STW33N60M2

DS9497 - Rev 3 - June 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...20

中文翻译

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