Datasheet > STW33N60M6

STW33N60M6

更新时间： 2024-09-29 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	261K
描述
N沟道600 V、105 mOhm典型值、25 A MDmesh M6功率MOSFET，TO-247封装

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中文翻译

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技术参数
数据手册

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STW33N60M6 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	2.26
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STW33N60M6 数据手册

STW33N60M6

Datasheet

N-channel 600 V, 105 mΩ typ., 25 A, MDmesh™ M6

Power MOSFET in a TO-247 package

Features

max.

Order code

STW33N60M6

DS(on)

600 V

125 mΩ

25 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO-247

Zener-protected

D(2)

Applications

•

Switching applications

LLC converters

G(1)

Boost PFC converters

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to

the well-known and consolidated MDmesh family of SJ MOSFETs.

S(3)

AM15572v1_no_tab

STMicroelectronics builds on the previous generation of MDmesh devices through its

new M6 technology, which combines excellent R_DS(on)per area improvement with

one of the most effective switching behaviors available, as well as a user-friendly

experience for maximum end-application efficiency.

Product status link

STW33N60M6

Product summary

Order code

Marking

STW33N60M6

33N60M6

TO-247

Package

Packing

Tube

DS12639 - Rev 2 - July 2018

www.st.com

For further information contact your local STMicroelectronics sales office.

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