Datasheet > STW34NB20_04

STW34NB20_04

更新时间： 2024-01-21 02:24:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	233K
描述
N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET

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STW34NB20_04 数据手册

STW34NB20

N-CHANNEL 200V - 0.062 Ω - 34A TO-247

PowerMESH™ MOSFET

Table 1. General Features

Figure 1. Package

Type

DSS

DS(on)

STW34NB20

200 V

< 0.075 Ω

34 A

FEATURES SUMMARY

■ TYPICAL R = 0.062 Ω

DS(on)

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

TO-247

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstand-

ing performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

Figure 2. Internal Schematic Diagram

per area, exceptional avalanche and dv/dt

DS(on)

capabilities and unrivalled gate charge and switch-

ing characteristics.

APPLICATIONS

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

■ HIGH CURRENT, HIGH SPEED SWITCHING

Table 2. Order Codes

Part Number

Marking

Package

Packaging

STW34NB20

W34NB20

TO-247

TUBE

REV. 2

April 2004

1/10

12 3 4 5 6 7...10

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