Datasheet > STW26NM60N-H

STW26NM60N-H

更新时间： 2024-11-21 20:01:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		局域网
页数	文件大小	规格书
12页	678K
描述
20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

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技术参数
数据手册

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STW26NM60N-H 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-247	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.32	Base Number Matches：	1

STW26NM60N-H 数据手册

STW26NM60N-H

N-channel 600 V, 0.135 Ω, 20 A TO-247

MDmesh™ II Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

STW26NM60N-H

600 V

< 0.165 Ω

20 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

TO-247

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This series of devices implements second

generation MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

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Table 1.

Device summary

Order codes

STW26NM60N-H

Marking

Package

TO-247

Packaging

26NM60N

Tube

Note:

The device meets ECOPACK® standards, an environmentally-friendly grade of products

commonly referred to as “halogen-free” . See Section 4: Package mechanical data

October 2009

Doc ID 16382 Rev 1

1/12

www.st.com

12 3 4 5 6 7...12

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