Datasheet > STW27N60M2-EP

STW27N60M2-EP

更新时间： 2024-11-22 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	822K
描述
N沟道600 V、0.150 Ohm典型值、20 A MDmesh M2 EP功率MOSFET，TO-247封装

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

STW27N60M2-EP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
Factory Lead Time：	16 weeks	风险等级：	1.72
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STW27N60M2-EP 数据手册

STP27N60M2-EP,

STW27N60M2-EP

N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP

Power MOSFETs in TO-220 and TO-247 packages

Datasheet - production data

Features

TAB

Order code

R_DS(on)max

0.163 Ω

I_D

STP27N60M2-EP

STW27N60M2-EP

600 V

20 A

0.163 Ω



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

Very low turn-off switching losses

100% avalanche tested

TO-247

TO-220

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

Tailored for very high frequency converters

(f > 150 kHz)

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 EP enhanced

performance technology. Thanks to their strip

layout and an improved vertical structure, these

devices exhibit low on-resistance, optimized

switching characteristics with very low turn-off

switching losses, rendering them suitable for the

most demanding very high frequency converters.

Table 1: Device summary

Marking

Order code

Package

TO-220

TO-247

Packaging

STP27N60M2-EP

STW27N60M2-EP

27N60M2EP

Tube

December 2015

DocID028723 Rev 1

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

中文翻译

下载PDF

与STW27N60M2-EP相关器件

型号	品牌	获取价格	描述	数据表
STW27NM60ND	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh II Power MOSFET (with fast di
STW28N60DM2	STMICROELECTRONICS	获取价格	N沟道600 V、0.13 Ohm典型值、21 A MDmesh DM2功率MOSFET，
STW28N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.135 Ohm典型值、22 A MDmesh M2功率MOSFET，
STW28N65M2	STMICROELECTRONICS	获取价格	N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，T
STW28NK60Z	STMICROELECTRONICS	获取价格	N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-P
STW28NM50N	STMICROELECTRONICS	获取价格	N-channel Power MOSFETs developed using the second generation of MDmesh
STW28NM60ND	STMICROELECTRONICS	获取价格	N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-2
STW29NK50Z	STMICROELECTRONICS	获取价格	N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
STW29NK50ZD	STMICROELECTRONICS	获取价格	N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Dio
STW2C2N	DIALIGHT	获取价格	DuroSite? LED Area Light