STP80NF12FP

更新时间： 2024-11-20 22:40:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	503K
描述
N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/DPAK STripFET⑩ II POWER MOSFET

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中文翻译

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数据手册

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STP80NF12FP 数据手册

STB80NF12 STW80NF12

STP80NF12 STP80NF12FP

N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK

STripFET™ II POWER MOSFET

TYPE

DSS

DS(on)

TO-220

TO-220FP

STB80NF12

STP80NF12

STP80NF12FP

STW80NF12

120 V

<0.018 Ω

80 A(*)

■

TYPICAL R (on) = 0.013Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

TO-247

APPLICATION ORIENTED

D PAK

CHARACTERIZATION

TO-263

(Suffix “T4”)

■

SURFACE-MOUNTING D PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

■

HIGH-EFFICIENCY DC-DC CONVERTERS

■

UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STB_P_W80NF12

STP80NF12FP

Drain-source Voltage (V = 0)

120

± 20

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

I (*)

Drain Current (continuous) at T = 25°C

80(#)

60(#)

320(#)

Drain Current (continuous) at T = 100°C

(•)

Drain Current (pulsed)

320

300

2.0

Total Dissipation at T = 25°C

tot

Derating Factor

0.3

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Insulation Withstand Voltage (DC)

Storage Temperature

dv/dt

700

ISO

------

2500

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(#) Refer to SOA for the max allovable currente values on FP-type

due to thermal resistance value.

(*) Limited by Package

(2) I ≤35A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(1) Starting T = 25 C, I = 40A, V = 45V

(BR)DSS

JMAX.

March 2003

1/12

12 3 4 5 6 7...12

中文翻译

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与STP80NF12FP相关器件

型号	品牌	获取价格	描述	数据表
STP80NF55-06	STMICROELECTRONICS	获取价格	N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET
STP80NF55-06-1	STMICROELECTRONICS	获取价格	80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TABLESS TO-220, I2PAK-3
STP80NF55-06FP	STMICROELECTRONICS	获取价格	N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET
STP80NF55-07	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 80A I(D) \| TO-220
STP80NF55-08	STMICROELECTRONICS	获取价格	N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/
STP80NF55L-06	STMICROELECTRONICS	获取价格	N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET
STP80NF55L-08	STMICROELECTRONICS	获取价格	N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PA
STP80NF70	STMICROELECTRONICS	获取价格	N-channel 68 V, 0.0082 Î©, 98 A, TO-220 STrip
STP80NF75L	STMICROELECTRONICS	获取价格	N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/
STP80NS04Z	STMICROELECTRONICS	获取价格	N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

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