Datasheet > STP8N120K5

STP8N120K5

更新时间： 2024-11-22 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	274K
描述
N沟道1200 V、1.65 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-220封装

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STP8N120K5 数据手册

STP8N120K5

Datasheet

N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET

in a TO-220 package

Features

DS(on)

max.

TOT

Order code

TAB

STP8N120K5

1200 V

2.00 Ω

6 A

130 W

•

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

TO-220

100% avalanche tested

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

S(3)

AM01475V1

Product status link

STP8N120K5

Product summary

Order code

Marking

STP8N120K5

8N120K5

TO-220

Package

Packing

Tube

DS12529 - Rev 3 - May 2018

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...13

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