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STP8N80K5 PDF预览

STP8N80K5

更新时间: 2024-09-28 12:06:07
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 1191K
描述
N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages

STP8N80K5 数据手册

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STP8N80K5,  
STU8N80K5  
N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH™ 5  
Power MOSFET in TO-220 and IPAK packages  
Datasheet  
production data  
Features  
Order codes  
VDS RDS(on)max.  
800 V 0.95 Ω  
ID  
PTOT  
STP8N80K5  
STU8N80K5  
TAB  
6 A 110 W  
TAB  
3
Worldwide best FOM (figure of merit)  
Ultra low gate charge  
2
1
3
2
1
IPAK  
100% avalanche tested  
Zener-protected  
TO-220  
Applications  
Switching applications  
Figure 1. Internal schematic diagram  
D(2,TAB)  
Description  
These N-channel Zener-protected Power  
MOSFETs are designed using ST’s revolutionary  
avalanche-rugged very high voltage  
G(1)  
SuperMESH™ 5 technology, based on an  
innovative proprietary vertical structure. The  
result is a dramatic reduction in on-resistance,  
and ultra-low gate charge for applications which  
require superior power density and high  
efficiency.  
S(3)  
AM01476v1  
Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STP8N80K5  
STU8N80K5  
TO-220  
IPAK  
8N80K5  
Tube  
March 2013  
DocID023544 Rev 4  
1/16  
This is information on a product in full production.  
www.st.com  
16  
 

STP8N80K5 替代型号

型号 品牌 替代类型 描述 数据表
STU8N80K5 STMICROELECTRONICS

完全替代

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPA
STD8N80K5 STMICROELECTRONICS

功能相似

N沟道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET,DPA

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