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STP8NM60N PDF预览

STP8NM60N

更新时间: 2024-11-25 04:01:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
17页 493K
描述
N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh⑩ Power MOSFET

STP8NM60N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.7其他特性:AVALANCHE RATED
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.65 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP8NM60N 数据手册

 浏览型号STP8NM60N的Datasheet PDF文件第2页浏览型号STP8NM60N的Datasheet PDF文件第3页浏览型号STP8NM60N的Datasheet PDF文件第4页浏览型号STP8NM60N的Datasheet PDF文件第5页浏览型号STP8NM60N的Datasheet PDF文件第6页浏览型号STP8NM60N的Datasheet PDF文件第7页 
STD8NM60N - STD8NM60N-1  
STF8NM60N - STP8NM60N  
N-channel 600 V - 0.56 - 7 A - TO-220 - TO-220FP - IPAK - DPAK  
second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
2
1
3
2
STD8NM60N  
STD8NM60N-1  
STF8NM60N  
STP8NM60N  
650 V  
650 V  
650 V  
650 V  
<0.65 Ω  
<0.65 Ω  
<0.65 Ω  
<0.65 Ω  
7 A  
7 A  
7 A(1)  
1
IPAK  
TO-220  
7 A  
1. Limited only by maximum temperature allowed  
3
3
1
2
1
100% avalanche tested  
DPAK  
TO-220FP  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices implements second  
generation MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the Company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order code  
Marking  
Package  
DPAK  
Packaging  
STD8NM60N  
STD8NM60N-1  
STF8NM60N  
STP8NM60N  
D8NM60N  
D8NM60N-1  
F8NM60N  
P8NM60N  
Tape & reel  
Tube  
IPAK  
TO-220FP  
TO-220  
Tube  
Tube  
January 2008  
Rev 2  
1/17  
www.st.com  
17  

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