Datasheet > STP9435S8RG

STP9435S8RG

更新时间： 2024-02-22 05:20:51

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
7页	379K
描述
P Channel Enhancement Mode MOSFET

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STP9435S8RG 数据手册

STP9435

P Channel Enhancement Mode MOSFET

5.6A

DESCRIPTION

ST9435 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as battery pack, notebook

computer power management, and other battery powered circuits.

FEATURE

PIN CONFIGURATION

SOP-8

-30V/-5.6A, R_DS(ON)= 60mΩ

@V^GS= -10V

-30V/-5.0A, R_DS(ON)= 70mΩ

@V^GS= -6.0V

-30V/-4.4A, R_DS(ON)= 80mΩ

@V^GS= -4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum DC

current capability

SOP-8 package design

PART MARKING

SOP-8

ORDERING INFORMATION

Part Number

Package

Part Marking

STP9435S8RG

SOP-8P

STP9435

STP9435S8TG

SOP-8P

STP9435

※ Process Code : A ~ Z ; a ~ z

※ STP9435S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free

※ STP9435S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP9435 2007. V1

12 3 4 5 6 7

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