Datasheet > STP9N80K5

STP9N80K5

更新时间： 2024-11-21 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	791K
描述
N沟道800 V、0.73 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-220封装

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STP9N80K5 数据手册

STP9N80K5, STW9N80K5

N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5

Power MOSFETs in a TO-220 and TO-247 packages

Datasheet - production data

Features

TAB

Order code

STP9N80K5

STW9N80K5

V_DS

R_DS(on)max.

I_D

800 V

0.90 Ω

7 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

TO-247

TO-220

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

These very high voltage N-channel Power

MOSFET are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Marking

Order code

STP9N80K5

STW9N80K5

Package

TO-220

TO-247

Packing

9N80K5

Tube

July 2016

DocID028461 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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