Datasheet > STP9NK65Z_07

STP9NK65Z_07

更新时间： 2024-11-18 12:32:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	351K
描述
N-channel 650 V - 1 - 6.4 A TO-220 / TO-220FP

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中文翻译

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STP9NK65Z_07 数据手册

STP9NK65Z

STP9NK65ZFP

N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP

Zener-protected SuperMESH™ Power MOSFET

Features

Type

V_DSS

R_DS(on)

I_D

6.4 A 125 W

6.4 A 30 W

STP9NK65ZFP 650 V < 1.2 Ω

STP9NK65Z 650 V < 1.2 Ω

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

TO-220

TO-220FP

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Table 1.

Device summary

Order codes

Marking

Package

TO-220FP

TO-220

Packaging

STP9NK65ZFP

STP9NK65Z

P9NK65ZFP

P9NK65Z

Tube

December 2007

Rev 3

1/15

www.st.com

12 3 4 5 6 7...15

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