Datasheet > STP9N60M2

STP9N60M2

更新时间： 2024-11-19 14:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
27页	803K
描述
N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，TO-220封装

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STP9N60M2 数据手册

STD9N60M2, STP9N60M2, STU9N60M2

Datasheet

N-channel 600 V, 0.72 Ω typ., 5.5 A, MDmesh™ M2

Power MOSFETs in DPAK, TO-220 and IPAK packages

Features

TAB

@ T

max.

TOT

Order codes

STD9N60M2

STP9N60M2

STU9N60M2

Package

DPAK

Jmax

DS(on)

DPAK

TO-220

TAB

650 V

0.78 Ω

5.5 A

60 W

TO-220

IPAK

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01475V1

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

Product status link

STD9N60M2

STP9N60M2

STU9N60M2

DS9553 - Rev 3 - December 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...27

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