Datasheet > STP9235

STP9235

更新时间： 2024-01-25 21:09:31

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	331K
描述
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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STP9235 数据手册

STP9235

P Channel Enhancement Mode MOSFET

7.5A

DESCRIPTION

STP9235 is the P-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, notebook computer power management and other

battery powered circuits where high-side switching.

FEATURE

PIN CONFIGURATION

SOP-8

�

-25V/-7.5A, R_DS(ON)= 45mΩ

@VGS = -10V

-25V/-6.0A, R_DS(ON)= 55mΩ

@VGS = -6.0V

-25V/-5.4A, R_DS(ON)= 65mΩ

@VGS = -4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum DC

current capability

SOP-8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP9235 2009. V1

12 3 4 5 6

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