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STP90N55F4 PDF预览

STP90N55F4

更新时间: 2024-11-21 20:07:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
50页 1240K
描述
N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET

STP90N55F4 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:43 weeks 2 days
风险等级:5.73其他特性:ULTRA LOW-ON RESISTANCE
雪崩能效等级(Eas):290 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):90 A最大漏极电流 (ID):90 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP90N55F4 数据手册

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STP90N55F4 替代型号

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STP18N55M5 STMICROELECTRONICS

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