Datasheet > STP8NK80Z_07

STP8NK80Z_07

更新时间： 2024-11-25 04:01:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	420K
描述
N-channel 800V - 1.3ヘ - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH⑩ Power MOSFET

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中文翻译

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STP8NK80Z_07 数据手册

STP8NK80Z - STP8NK80ZFP

STW8NK80Z

N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247

Zener-protected SuperMESH™ Power MOSFET

Features

Type

V_DSS

R_DS(on)

I_D

STP8NK80Z

STP8NK80ZFP

STW8NK80Z

800 V

< 1.5 Ω

6.2 A

TO-220

TO-220FP

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

TO-247

Description

Figure 1.

Internal schematic diagram

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage MOSFETs including revolutionary

MDmesh™ products.

Application

■ Switching applications

Table 1.

Device summary

Order codes

Marking

Package

TO-220

Packaging

STP8NK80Z

STP8NK80ZFP

STW8NK80Z

P8NK80Z

P8NK80ZFP

W8NK80Z

Tube

TO-220FP

TO-247

July 2007

Rev 5

1/15

www.st.com

12 3 4 5 6 7...15

中文翻译

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