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STP8NM60FP PDF预览

STP8NM60FP

更新时间: 2024-11-20 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 604K
描述
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh⑩ Power MOSFET

STP8NM60FP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.51雪崩能效等级(Eas):200 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):8 A最大漏源导通电阻:1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP8NM60FP 数据手册

 浏览型号STP8NM60FP的Datasheet PDF文件第2页浏览型号STP8NM60FP的Datasheet PDF文件第3页浏览型号STP8NM60FP的Datasheet PDF文件第4页浏览型号STP8NM60FP的Datasheet PDF文件第5页浏览型号STP8NM60FP的Datasheet PDF文件第6页浏览型号STP8NM60FP的Datasheet PDF文件第7页 
STP8NM60, STP8NM60FP  
STD5NM60, STD5NM60-1  
N-CHANNEL 600V - 0.9- 8A TO-220/TO-220FP/DPAK/IPAK  
MDmesh™ Power MOSFET  
TYPE  
V
DSS  
R
I
D
Pw  
DS(on)  
STP8NM60  
STP8NM60FP  
STD5NM60  
STD5NM60-1  
600 V  
600 V  
600 V  
600 V  
< 1  
< 1 Ω  
< 1 Ω  
< 1 Ω  
8 A  
8 A(*)  
5 A  
100 W  
30 W  
96 W  
96 W  
5 A  
3
2
TO-220F1P  
TYPICAL R (on) = 0.9  
DS  
TO-220  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
3
2
LOW GATE INPUT RESISTANCE  
1
1
DPAK  
TO-252  
IPAK  
TO-251  
DESCRIPTION  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH™ horizontal  
layout. The resulting product has an outstanding low  
on-resistance, impressively high dv/dt and excellent  
avalanche characteristics. The adoption of the  
Company’s proprietary strip technique yields overall  
dynamic performance that is significantly better than  
that of similar completition’s products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh™ family is very suitable for increase  
the power density of high voltage converters allow-  
ing system miniaturization and higher efficiencies.  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P8NM60  
PACKAGE  
PACKAGING  
TUBE  
STP8NM60  
TO-220  
TO-220FP  
DPAK  
STP8NM60FP  
STD5NM60T4  
STD5NM60-1  
P8NM60FP  
D5NM60  
TUBE  
TAPE & REEL  
TUBE  
D5NM60  
IPAK  
August 2003  
1/13  

STP8NM60FP 替代型号

型号 品牌 替代类型 描述 数据表
STP6NK60ZFP STMICROELECTRONICS

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