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STP80NS04ZB PDF预览

STP80NS04ZB

更新时间： 2024-11-02 02:52:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 115K
描述
N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

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STP80NS04ZB 数据手册

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STP80NS04ZB  
N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220  
FULLY PROTECTED MESH OVERLAY™ MOSFET  
PRELIMINARY DATA  
V
R
I
D
TYPE  
DSS  
DS(on)  
STP80NS04ZB CLAMPED <0.008 Ω  
80 A  
■
■
■
■
TYPICAL R (on) = 0.0075 Ω  
DS  
100% AVALANCHE TESTED  
LOW CAPACITANCE AND GATE CHARGE  
o
175 C MAXIMUM JUNCTION  
TEMPERATURE  
3
2
1
DESCRIPTION  
TO-220  
This fully clamped Mosfet is produced by using the latest  
advanced Company’s Mesh Overlay process which is  
based on a novel strip layout.  
The inherent benefits of the new technology coupled with  
the extra clamping capabilities make this product  
particularly suitable for the harshest operation conditions  
such as those encountered in the automotive  
environment. Any other application requiring extra  
ruggedness is also recommended.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
ABS, SOLENOID DRIVERS  
MOTOR CONTROL  
DC-DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
CLAMPED  
DS  
GS  
V
DG  
Drain-gate Voltage  
CLAMPED  
V
V
GS  
Gate- source Voltage  
CLAMPED  
V
I
Drain Current (continuous) at T = 25°C  
80  
A
D
C
I
Drain Current (continuous) at T = 100°C  
60  
A
D
C
I
Drain Gate Current (continuous)  
Gate SourceCurrent (continuous)  
Drain Current (pulsed)  
± 50  
mA  
mA  
A
DG  
I
± 50  
GS  
I
(•)  
320  
DM  
P
Total Dissipation at T = 25°C  
200  
W
tot  
C
Derating Factor  
1.33  
W/°C  
kV  
kV  
kV  
°C  
°C  
V
V
V
Gate-Source ESD (HBM - C = 100pF, R=1.5 kΩ)  
Gate-Drain ESD (HBM - C = 100pF, R=1.5 kΩ)  
Drain-source ESD (HBM - C = 100pF, R=1.5 kΩ)  
Storage Temperature  
4
ESD(G-S)  
ESD(G-D)  
ESD(D-S)  
4
4
T
stg  
-65 to 175  
-40 to 175  
T
Max. Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
May 2003  
1/6  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  
123456

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STP80NS04ZB 替代型号

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