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STP80PF55 PDF预览

STP80PF55

更新时间: 2024-11-20 22:50:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
6页 106K
描述
P-CHANNEL 55V - 0.016 ohm - 80A TO-220 STripFET⑩ II POWER MOSFET

STP80PF55 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:7.74Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180349
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220 TYPE A
Samacsys Released Date:2015-07-22 14:47:15Is Samacsys:N
雪崩能效等级(Eas):1400 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP80PF55 数据手册

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STP80PF55  
P-CHANNEL 55V - 0.016 - 80A TO-220  
STripFET™ II POWER MOSFET  
PRELIMINARY DATA  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB80PF55  
55 V  
< 0.018 Ω  
80 A  
TYPICAL R (on) = 0.016 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
2
1
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
55  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
55  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
80  
V
GS  
I (*)  
D
Drain Current (continuos) at T = 25°C  
A
C
I
Drain Current (continuos) at T = 100°C  
57  
A
D
C
I
()  
Drain Current (pulsed)  
320  
300  
2
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
7
dv/dt  
E
1.4  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area  
(*) Current Limited by Package  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
(1) I 40A, di/dt 300A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
o
(2) Starting T = 25 C, I = 80A, V = 40V  
j
D
DD  
February 2002  
1/6  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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