STP8444

更新时间： 2024-09-27 08:59:07

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
8页	231K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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STP8444 数据手册

STB/P8444

Ver 1.0

S mHop Microelectronics Corp.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

RDS(ON) (m

Ω) Max

VDSS

40V

Rugged and reliable.

80A

4.8 @ VGS=10V

TO-220 and TO-263 Package.

STB SERIES

TO-263(DD-PAK)

STP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

Limit

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

T_C=25 C

Drain Current-Continuous

264

306

I_DM

E_AS

P_D

-Pulsed

Sigle Pulse Avalanche Energy

Maximum Power Dissipation

T_C=25 C

Operating Junction and Storage

Temperature Range

-55 to 150

°C

T_J, T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.8

°C/W

62.5

Details are subject to change without notice.

Mar,26,2008

www.samhop.com.tw

12 3 4 5 6 7 8

中文翻译

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