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STP85NF55 PDF预览

STP85NF55

更新时间: 2024-11-01 22:29:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 378K
描述
N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET⑩ II POWER MOSFET

STP85NF55 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.51雪崩能效等级(Eas):980 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP85NF55 数据手册

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STB85NF55  
STP85NF55  
2
N-CHANNEL 55V - 0.0062 - 80A D PAK/TO-220  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB85NF55  
STP85NF55  
55 V  
55 V  
<0.008 Ω  
<0.008 Ω  
80 A  
80 A  
TYPICAL R (on) = 0.0062 Ω  
DS  
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
3
1
3
2
2
D PAK  
TO-263  
DESCRIPTION  
1
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
(Suffix “T4”)  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
55  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R  
Gate- source Voltage  
= 20 k)  
GS  
55  
V
DGR  
V
± 20  
80  
V
GS  
I ()  
D
Drain Current (continuous) at T = 25°C  
A
C
I
D
Drain Current (continuous) at T = 100°C  
80  
A
C
I
(•)  
Drain Current (pulsed)  
320  
300  
2.0  
10  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
980  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(1)  
(2)  
I
80A, di/dt 300A/µs, V  
V  
V
, T T  
(BR)DSS JMAX  
DD  
()Current Limited by Package  
(•) Pulse width limited by safe operating area  
SD  
DD  
= 40A  
j
.
o
Starting T = 25 C  
I
= 25V  
j
D
January 2003  
1/10  

STP85NF55 替代型号

型号 品牌 替代类型 描述 数据表
HUF75345P3 FAIRCHILD

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