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STP80NF55L-06 PDF预览

STP80NF55L-06

更新时间: 2024-11-20 22:17:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 86K
描述
N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET

STP80NF55L-06 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.68其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):1300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):210 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP80NF55L-06 数据手册

 浏览型号STP80NF55L-06的Datasheet PDF文件第2页浏览型号STP80NF55L-06的Datasheet PDF文件第3页浏览型号STP80NF55L-06的Datasheet PDF文件第4页浏览型号STP80NF55L-06的Datasheet PDF文件第5页浏览型号STP80NF55L-06的Datasheet PDF文件第6页浏览型号STP80NF55L-06的Datasheet PDF文件第7页 
STP80NF55L-06  
N - CHANNEL 55V - 0.005 - 80A TO-220  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on )  
ID  
STP80NF55L-06  
55 V < 0.0065 Ω  
80 A  
TYPICAL RDS(on) = 0.005 Ω  
LOW THRESHOLD DRIVE  
LOGIC LEVEL DEVICE  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
3
2
1
TO-220  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
55  
55  
V
V
± 20  
80  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
57  
A
IDM  
(
Drain Current (pulsed)  
320  
210  
1.4  
A
)  
o
Ptot  
Total Dissipation at Tc = 25 C  
W
W/oC  
J
Derating Factor  
EAS(1) Single Pulse Avalanche Energy  
1
Tstg  
Tj  
Storage Temperature  
-65 to 175  
oC  
oC  
Max. Operating Junction Temperature  
175  
() Pulse width limitedby safe operating area  
( 1) starting Tj = 25 oC, ID =40A , VDD = 30V  
1/8  
October 1999  

STP80NF55L-06 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

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N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP5NK100Z STMICROELECTRONICS

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N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
STP55NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

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