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STP80NS04Z PDF预览

STP80NS04Z

更新时间: 2024-11-20 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 93K
描述
N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP80NS04Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
其他特性:AVALANCHE RATED雪崩能效等级(Eas):500 mJ
配置:SINGLE WITH BUILT-IN DIODE最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP80NS04Z 数据手册

 浏览型号STP80NS04Z的Datasheet PDF文件第2页浏览型号STP80NS04Z的Datasheet PDF文件第3页浏览型号STP80NS04Z的Datasheet PDF文件第4页浏览型号STP80NS04Z的Datasheet PDF文件第5页浏览型号STP80NS04Z的Datasheet PDF文件第6页浏览型号STP80NS04Z的Datasheet PDF文件第7页 
STP80NS04Z  
N - CHANNEL CLAMPED 7.5m  
- 80A - TO-220  
FULLY PROTECTED MESH OVERLAY MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP80NS04Z  
CLAMPED <0.008 Ω  
80 A  
TYPICAL RDS(on) = 0.0075 Ω  
100% AVALANCHE TESTED  
LOW CAPACITANCE AND GATE CHARGE  
175 oC MAXIMUM JUNCTION  
TEMPERATURE  
3
DESCRIPTION  
2
1
This fully clamped Mosfet is produced by using  
the latest advanced Company’s Mesh Overlay  
processwhich is based on a novel strip layout.  
The inherent benefits of the new technology  
coupled with the extra clamping capabilities make  
this product particularly suitable for the harshest  
operation conditions such as those encountered  
in the automotive environment. Any other  
application requiring extra ruggedness is also  
recommended.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
ABS, SOLENOID DRIVERS  
MOTOR CONTROL  
DC-DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDG  
VGS  
ID  
Parameter  
Value  
CLAMPED  
CLAMPED  
CLAMPED  
80  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage  
V
V
Gate-source Voltage  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
60  
A
IDG  
Drain Gate Current (continuous)  
Gate Source Current (continuous)  
50  
mA  
mA  
A
±
IGS  
± 50  
IDM() Drain Current (pulsed)  
320  
o
Ptot  
Total Dissipation at Tc = 25 C  
Derating Factor  
160  
W
1.06  
W/oC  
kV  
kV  
kV  
oC  
oC  
VESD  
Gate-Source ESD (HBM - C= 100pF, R=1.5 k  
)
2
(G-S)  
VESD(G-D) Gate-Drain ESD (HBM - C= 100pF, R=1.5 k)  
VESD(D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 k)  
4
4
Tstg  
Storage Temperature  
-65 to 175  
Tj  
Max. Operating Junction Temperature  
-40 to 175  
() Pulse width limited by safe operating area  
(1) ISD 80 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/8  
December 1999  

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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-220AB