Datasheet > STP150N10F7

STP150N10F7

更新时间： 2024-11-24 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	824K
描述
N沟道100 V、0.0036 Ohm典型值、110 A STripFET F7功率MOSFET，TO-220封装

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技术参数
数据手册

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STP150N10F7 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.51
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STP150N10F7 数据手册

STI150N10F7,

STP150N10F7

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7

Power MOSFETs in I PAK and TO-220 packages

Datasheet

−

production data

Features

Order codes

V_DSR_DS(on)max

I_D

P_TOT

STI150N10F7

STP150N10F7

100 V 0.0042 Ω 110 A 250 W

TAB

• Among the lowest R_DS(on)on the market

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

I²PAK

TO-220

Applications

• Switching applications

Description

Figure 1. Internal schematic diagram

These N-channel Power MOSFETs utilize

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

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Table 1. Device summary

Order codes

Marking

Package

Packaging

I²PAK

STI150N10F7

STP150N10F7

150N10F7

Tube

TO-220

August 2014

DocID024552 Rev 4

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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