是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.33 | 雪崩能效等级(Eas): | 45 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 10 A |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.15 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP15N06L | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STP15N06LFI | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STP15N60M2-EP | STMICROELECTRONICS |
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N沟道600 V、0.340 Ohm典型值、11 A MDmesh M2 EP功率MOSF | |
STP15N65M5 | STMICROELECTRONICS |
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N-channel 650 V, 0.308 Ω typ., 11 A MDmeshâ | |
STP15N80K5 | STMICROELECTRONICS |
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N沟道800 V、0.3 Ohm典型值、14 A MDmesh K5功率MOSFET,TO | |
STP15N95K5 | STMICROELECTRONICS |
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N沟道950 V、0.41 Ohm典型值、12 A MDmesh K5功率MOSFET,T | |
STP15NK50Z | STMICROELECTRONICS |
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N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PA | |
STP15NK50Z_07 | STMICROELECTRONICS |
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N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/ | |
STP15NK50ZFP | STMICROELECTRONICS |
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N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PA | |
STP15NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO |