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STP15N05LFI PDF预览

STP15N05LFI

更新时间: 2024-11-22 22:34:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 203K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP15N05LFI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.33雪崩能效等级(Eas):45 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):10 A
最大漏极电流 (ID):10 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP15N05LFI 数据手册

 浏览型号STP15N05LFI的Datasheet PDF文件第2页浏览型号STP15N05LFI的Datasheet PDF文件第3页浏览型号STP15N05LFI的Datasheet PDF文件第4页浏览型号STP15N05LFI的Datasheet PDF文件第5页浏览型号STP15N05LFI的Datasheet PDF文件第6页浏览型号STP15N05LFI的Datasheet PDF文件第7页 
STP15N05L  
STP15N05LFI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STP15N05L  
STP15N05LFI  
50 V  
50 V  
< 0.15 Ω  
< 0.15 Ω  
15 A  
10 A  
TYPICAL RDS(on) = 0.115 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
3
3
2
2
1
1
LOGIC LEVEL COMPATIBLE INPUT  
175oC OPERATING TEMPERATURE  
APPLICATION ORIENTED  
TO-220  
ISOWATT220  
CHARACTERIZATION  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP15N05L  
STP15N05LFI  
VDS  
VDG R  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
50  
50  
V
V
± 15  
V
15  
10  
10  
7
A
ID  
A
IDM()  
Ptot  
60  
60  
A
Total Dissipation at Tc = 25 oC  
70  
35  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.47  
0.23  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
November 1996  

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