Datasheet > STP15N80K5

STP15N80K5

更新时间： 2024-11-08 14:58:03

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意法半导体 - STMICROELECTRONICS		/
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23页	1735K
描述
N沟道800 V、0.3 Ohm典型值、14 A MDmesh K5功率MOSFET，TO-220封装

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替代型号

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STP15N80K5 数据手册

STB15N80K5, STF15N80K5,

STP15N80K5, STW15N80K5

N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs

in D PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet

−

production data

Features

TAB

Order code

V_DS

R_DS(on)max

I_D

P_TOT

STB15N80K5

STF15N80K5

STP15N80K5

STW15N80K5

190 W

35 W

D²PAK

800 V

0.375 Ω

14 A

TO-220FP

190 W

TAB

• Industry’s lowest R_DS(on)x area

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

TO-220

TO-247

• 100% avalanche tested

• Zener-protected

Figure 1. Internal schematic diagram

D(2, TAB)

Applications

• Switching applications

Description

G(1)

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

S(3)

AM01476v1

Table 1. Device summary

Order code

Marking

Package

Packaging

STB15N80K5

STF15N80K5

STP15N80K5

STW15N80K5

D²PAK

TO-220FP

TO-220

Tape and reel

15N80K5

Tube

TO-247

October 2014

DocID023468 Rev 3

1/23

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...23

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STP15N80K5 替代型号

型号	品牌	替代类型	描述	数据表
STB15N80K5	STMICROELECTRONICS	完全替代	N沟道800 V、0.3 Ohm典型值、14 A MDmesh K5功率MOSFET，D2
SPP17N80C3	INFINEON	功能相似	Cool MOS⑩ Power Transistor

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