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STP155N75F4 PDF预览

STP155N75F4

更新时间: 2024-11-24 05:55:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 506K
描述
120A, 75V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

STP155N75F4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84其他特性:AVALANCHE ENERGY RATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):120 A最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0058 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):480 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP155N75F4 数据手册

 浏览型号STP155N75F4的Datasheet PDF文件第2页浏览型号STP155N75F4的Datasheet PDF文件第3页浏览型号STP155N75F4的Datasheet PDF文件第4页浏览型号STP155N75F4的Datasheet PDF文件第5页浏览型号STP155N75F4的Datasheet PDF文件第6页浏览型号STP155N75F4的Datasheet PDF文件第7页 
STH155N75F4-2  
STP155N75F4  
N-channel 75 V, 4.2 m, 160 A TO-220, H2PAK  
StripFET™ DeepGATE™ Power MOSFET  
Preliminary data  
Features  
Type  
VDSS  
RDS(on) max  
ID  
2
STP155N75F4  
75 V  
75 V  
5.8 m  
5.2 mΩ  
120 A  
160 A  
STH155N75F4-2  
3
3
3
Extremely low on-resistance R  
100% avalanche tested  
DS(on)  
2
1
1
TO-220  
H²PAK  
Application  
Switching applications  
Description  
Figure 1.  
Internal schematic diagram  
This STripFET™ DeepGATE™ Power MOSFET  
technology is among the latest improvements,  
which have been especially tailored to minimize  
on-state resistance, with a new gate structure,  
providing superior switching performance.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STP155N75F4  
155N75F4  
155N75F4  
TO-220  
PAK  
Tube  
STH155N75F4-2  
Tape and reel  
March 2010  
Doc ID 15211 Rev 3  
1/12  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
12  

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