Datasheet > STP150N10F7AG

STP150N10F7AG

更新时间： 2024-11-24 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	223K
描述
N-channel 100 V STripFET F7 Power MOSFET in TO-220 package for Automotive Applications

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STP150N10F7AG 数据手册

STP150N10F7AG

Datasheet

Automotive N-channel 100 V, 3.6 mΩ typ., 110 A, STripFET F7

Power MOSFET in a TO-220 package

Features

DS(on)

max.

Order code

TAB

STP150N10F7AG

100 V

4.2 mΩ

110 A

•

Designed for automotive application

Standard level V_GS(TH)

TO-220

175°C junction temperature

100% avalanche rated

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced

trench gate structure that results in very low on-state resistance, while also reducing

internal capacitance and gate charge for faster and more efficient switching.

S(3)

AM01475v1_noZen

Product status link

STP150N10F7AG

Product summary

Order code

Marking

STP150N10F7AG

150N10F7AG

TO-220

Package

Packing

Tube

DS13798 - Rev 2 - March 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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