是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DIP | 包装说明: | ROHS COMPLIANT, DIP-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 1.75 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 400 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 8 |
JESD-30 代码: | R-PDIP-T8 | 元件数量: | 2 |
端子数量: | 8 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 3 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD85N10F7AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道100 V、0.0085 Ohm典型值、70 A STripFET F7功率M | |
STD85N3LH5 | STMICROELECTRONICS |
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N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220 | |
STD85N3LH5_10 | STMICROELECTRONICS |
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N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220 | |
STD86N3LH5 | STMICROELECTRONICS |
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N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET | |
STD882 | AUK |
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NPN Silicon Transistor | |
STD882D | AUK |
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NPN Silicon Transistor | |
STD882D | KODENSHI |
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NPN Silicon Transistor | |
STD888 | STMICROELECTRONICS |
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HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR | |
STD888 | UTC |
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HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR | |
STD888_15 | UTC |
获取价格 |
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR |