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STD840DN40 PDF预览

STD840DN40

更新时间: 2024-11-24 19:19:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关光电二极管晶体管
页数 文件大小 规格书
9页 98K
描述
Dual NPN high voltage transistors in a single package

STD840DN40 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DIP包装说明:ROHS COMPLIANT, DIP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.75
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小直流电流增益 (hFE):8
JESD-30 代码:R-PDIP-T8元件数量:2
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD840DN40 数据手册

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STD840DN40  
Dual NPN high voltage transistors in a single package  
Datasheet — production data  
Features  
Low VCE(sat)  
Simplified circuit design  
Reduced component count  
Fast switching speed  
8
4
1
Applications  
Compact fluorescent lamp (CFL) 220 V mains  
Electronic ballast for fluorescent lighting  
DIP-8  
Description  
Figure 1.  
Internal schematic diagram  
This device is a dual NPN high voltage power  
transistor manufactured using multi-epitaxial  
planar technology. It is housed in a dual-island  
DIP-8 package, with separated terminals for a  
high degree of mounting flexibility.  
Table 1.  
Device summary  
Order code  
Marking  
Package  
Packaging  
STD840DN40  
D840DN40  
DIP-8  
Tube  
October 2012  
Doc ID 16796 Rev 3  
1/9  
This is information on a product in full production.  
www.st.com  
9

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