Datasheet > STD85N10F7AG

STD85N10F7AG

更新时间： 2023-12-20 18:44:32

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	980K
描述
汽车级N沟道100 V、0.0085 Ohm典型值、70 A STripFET F7功率MOSFET，DPAK封装

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STD85N10F7AG 数据手册

STD85N10F7AG

Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A

STripFET™ F7 Power MOSFET in a DPAK package

Datasheet

production data

Features

R_DS(on)

max

Order code

V_DS

I_D

P_TOT

TAB

STD85N10F7AG 100 V 0.010 ꢀ

70 A

85 W

• Designed for automotive applications and

AEC-Q101 qualified

DPAK

• Among the lowest R_DS(on)on the market

• Excellent figure of merit (FoM)

• Low C_rss/C_issratio for EMI immunity

• High avalanche ruggedness

Applications

Figure 1. Internal schematic diagram

• Switching applications

'ꢅꢆꢇꢈ7$%ꢉ

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

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Table 1. Device summary

Order code

Marking

Package

DPAK

Packing

STD85N10F7AG

85N10F7

Tape and reel

May 2015

DocID027030 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

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