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STD3055L2 PDF预览

STD3055L2

更新时间: 2024-11-07 21:54:19
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 720K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

STD3055L2 数据手册

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STU/D3055L2  
SamHop Microelectronics Corp.  
Feb.01 2005 ver1.3  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
PRODUCT SUMMARY  
FEATURES  
Super high dense cell design for low RDS(ON).  
Rugged and reliable.  
VDSS  
ID  
RDS(ON) ( m  
)
Max  
40 @ VGS = 10V  
45 @ VGS = 4.5V  
20V  
18A  
TO-252 and TO-251 Package.  
D
D
G
S
G
STU SERIES  
TO-252AA(D-PAK)  
STD SERIES  
TO-251(l-PAK)  
S
ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)  
C
Limit  
20  
Unit  
V
Parameter  
Symbol  
Drain-Source Voltage  
VDS  
VGS  
V
Gate-Source Voltage  
12  
I
D
18  
A
Drain Current-Continuous @T  
-Pulsed a  
C
=25 C  
I
DM  
30  
A
Drain-Source Diode Forward Current  
15  
50  
I
S
A
W
C
P
D
Maximum Power Dissipation  
@Tc=25 C  
Operating and Storage  
Temperature Range  
T
J
, TSTG  
-55 to 175  
THERMAL CHARACTERISTICS  
3
R
R
JC  
JA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
C/W  
C/W  
50  
1

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