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STD30NF06L PDF预览

STD30NF06L

更新时间: 2024-09-19 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 463K
描述
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET⑩ POWER MOSFET

STD30NF06L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.16Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):150 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):35 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):140 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD30NF06L 数据手册

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STD30NF06L  
N-CHANNEL 60V - 0.022- 35A DPAK/IPAK  
STripFET™ POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD30NF06L  
60 V  
<0.028Ω  
35 A  
TYPICAL R (on) = 0.022Ω  
EXCEPTIONAL dv/dt CAPABILITY  
LOGIC LEVEL GATE DRIVE  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
DS  
3
3
2
1
1
ADD SUFFIX “-1” FOR ORDERING IN IPAK  
CHARACTERIZATION ORIENTED FOR  
AUTOMOTIVE APPLICATIONS  
IPAK  
DPAK  
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting tran-  
sistor shows extremely high packing density for  
low on-resistance, rugged avalance characteris-  
tics and less critical alignment steps therefore a re-  
markable manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH-EFFICIENCY DC-DC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
60  
DGR  
GS  
V
Gate- source Voltage  
± 20  
35  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
25  
A
D
C
I
( )  
Drain Current (pulsed)  
140  
70  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
0.46  
25  
W/°C  
V/ns  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
– 55 to 175  
°C  
T
Operating Junction Temperature  
j
(1) I 38A, di/dt 400A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
() Pulse width limited by safe operating area  
July 2002  
1/10  

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