Datasheet > STD30NF06LT4

STD30NF06LT4

更新时间： 2024-09-19 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	167K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 35A I(D) \| TO-252AA

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数据手册

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STD30NF06LT4 数据手册

STD30NF06L

- 35A DPAK/IPAK

N-CHANNEL 60V - 0.022

Ω

STripFET POWER MOSFET

TYPE

DS(on)

DSS

STD30NF06L

60 V

<0.028Ω

35 A

■

TYPICAL R (on) = 0.022Ω

EXCEPTIONAL dv/dt CAPABILITY

LOGIC LEVEL GATE DRIVE

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

■

ADD SUFFIX “-1” FOR ORDERING IN IPAK

CHARACTERIZATION ORIENTED FOR

AUTOMOTIVE APPLICATIONS

IPAK

DPAK

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique “Single Feature

Size ” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH-EFFICIENCY DC-DC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 20

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(l )

Drain Current (pulsed)

140

Total Dissipation at T = 25°C

TOT

Derating Factor

0.46

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

– 55 to 175

°C

Operating Junction Temperature

(1) I ≤38A, di/dt ≤400A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

(●) Pulse width limited by safe operating area

July 2002

1/10

12 3 4 5 6 7...10

中文翻译

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