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STD30PF30L PDF预览

STD30PF30L

更新时间： 2024-09-19 23:34:59
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
10页 476K
描述
P-CHANNEL 30V - 0.025 OHM - 24A IPAK/DPAK STRIPFET II POWER MOSFET

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STD30PF30L 数据手册

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STD30PF30L  
P-CHANNEL 30V - 0.025 Ω - 24A IPAK/DPAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STD30PF30L  
30 V  
<0.028 Ω  
24  
■
■
TYPICAL R (on) = 0.025Ω  
DS  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
LOW TRESHOLD DEVICE  
3
3
■
■
■
2
1
LOW GATE CHARGE  
1
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
TO-251  
■
(Suffix “-1”)  
DESCRIPTION  
This MOSFET is the latest development of  
STMicroelectronics unique “Single Feature Size™” strip-  
based process The resulting transistor shows extremely  
high packing density for low on-resistance and low gate  
charge.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
DC-DC CONVERTERS  
Ordering Information  
SALES TYPE  
STD30PF03LT4  
STD30PF03L-1  
MARKING  
D30PF30L  
D30PF30L  
PACKAGE  
TO-252  
TO-251  
PACKAGING  
TAPE & REEL  
TUBE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
30  
30  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
24  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D(#)  
C
I
Drain Current (continuous) at T = 100°C  
24  
A
D(#)  
C
I (•)  
DM  
Drain Current (pulsed)  
96  
A
P
Total Dissipation at T = 25°C  
70  
W
tot  
C
Derating Factor  
0.47  
850  
W/°C  
mJ  
E
Single Pulse Avalanche Energy  
Storage Temperature  
AS(1)  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
Note: For the P-CHANNEL MOSFET actual polarity of voltages and  
current has to be reversed  
(#) Current limited by wire bonding  
o
DD  
(1) Starting T = 25 C, I =12 A, V = 15V  
j
D
May 2003  
1/10  
.
1234567...10

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