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STD30NF06T4 PDF预览

STD30NF06T4

更新时间： 2024-09-19 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲PC
页数 文件大小 规格书
10页 177K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | TO-252AA

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中文翻译

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STD30NF06T4 数据手册

 浏览型号STD30NF06T4的Datasheet PDF文件第2页浏览型号STD30NF06T4的Datasheet PDF文件第3页浏览型号STD30NF06T4的Datasheet PDF文件第4页浏览型号STD30NF06T4的Datasheet PDF文件第5页浏览型号STD30NF06T4的Datasheet PDF文件第6页浏览型号STD30NF06T4的Datasheet PDF文件第7页 
STD30NF06  
- 28A IPAK/DPAK  
N-CHANNEL 60V - 0.020  
Ω
STripFET II POWER MOSFET  
V
R
DS(on)  
I
D
TYPE  
DSS  
STD30NF06  
60 V  
<0.028 Ω  
28 A  
■
■
■
■
TYPICAL R (on) = 0.020Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
3
3
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1”)  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4”)  
2
1
1
■
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
TO-251  
(Suffix “-1”)  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique ”Single Feature Size ” strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
INTERNAL SCHEMATIC DIAGRAM  
steps  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED  
MOTOR CONTROL , AUDIO AMPLIFIERS  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
60  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
28  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
20  
A
D
C
I
(•)  
Drain Current (pulsed)  
112  
70  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.47  
10  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
230  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
(1) I ≤28A, di/dt ≤300A/µs, V ≤ V  
, T ≤ T  
SD  
DD  
(BR)DSS j JMAX  
o
(2) Starting T = 25 C, I = 15A, V = 30V  
j
D
DD  
March 2002  
1/10  
.
1234567...10

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