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STD30NF06LAG PDF预览

STD30NF06LAG

更新时间: 2024-11-09 14:57:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 716K
描述
汽车级N沟道60 V、22 mOhm典型值、35 A STripFET II功率MOSFET,DPAK封装

STD30NF06LAG 数据手册

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STD30NF06LAG  
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A  
STripFET™ II Power MOSFET in a DPAK package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
STD30NF06LAG  
60 V  
0.028 Ω  
35 A  
AEC-Q101 qualified  
Low threshold drive  
Gate charge minimized  
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
D(2, TAB)  
Description  
This Power MOSFET series realized with  
STMicroelectronics unique STripFET™ process  
is specifically designed to minimize input  
capacitance and gate charge. It is therefore ideal  
as a primary switch in advanced high-efficiency  
isolated DC-DC converters for Telecom and  
Computer applications. It is also suitable for any  
application with low gate charge drive  
requirements.  
G(1)  
S(3)  
AM01475v1_noZen  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STD30NF06LAG  
D30NF06L  
DPAK  
Tape and reel  
February 2017  
DocID029664 Rev 2  
1/15  
www.st.com  
This is information on a product in full production.  

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