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STD30NF06 PDF预览

STD30NF06

更新时间: 2024-09-19 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 459K
描述
N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET⑩ II POWER MOSFET

STD30NF06 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
Is Samacsys:N雪崩能效等级(Eas):230 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):28 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):112 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD30NF06 数据手册

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STD30NF06  
N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STD30NF06  
60 V  
<0.028 Ω  
28 A  
TYPICAL R (on) = 0.020Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
3
3
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
2
1
1
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
TO-251  
(Suffix “-1”)  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
INTERNAL SCHEMATIC DIAGRAM  
steps  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
HIGH CURRENT, HIGH SWITCHING SPEED  
MOTOR CONTROL , AUDIO AMPLIFIERS  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
60  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
28  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
D
Drain Current (continuous) at T = 100°C  
20  
A
C
I
()  
Drain Current (pulsed)  
112  
70  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.47  
10  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
230  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(1) I 28A, di/dt 300A/µs, V V  
, T T  
SD  
DD  
(BR)DSS j JMAX  
o
(2) Starting T = 25 C, I = 15A, V = 30V  
j
D
DD  
March 2002  
1/10  
.

STD30NF06 替代型号

型号 品牌 替代类型 描述 数据表
STP10P6F6 STMICROELECTRONICS

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STD30NF06L UMW

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