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STD30NF03L PDF预览

STD30NF03L

更新时间: 2024-09-19 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 87K
描述
N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET

STD30NF03L 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.14Is Samacsys:N
其他特性:LOW THRESHOLD雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD30NF03L 数据手册

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STD30NF03L  
N - CHANNEL 30V - 0.020 - 30A DPAK  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD30NF03L  
30 V  
< 0.025 Ω  
30 A  
TYPICAL RDS(on) = 0.020 Ω  
LOW THRESHOLD DRIVE  
ADD SUFFIX ”T4” FOR ORDERING IN TAPE  
& REEL  
3
DESCRIPTION  
1
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
DPAK  
TO-252  
(Suffix ”T4”)  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
30  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
VDGR  
VGS  
30  
± 20  
30  
V
o
ID()  
ID  
Drain Current (continuous) at Tc = 25 C  
A
o
Drain Current (continuous) at Tc = 100 C  
19  
A
IDM  
(
Drain Current (pulsed)  
120  
A
• • )  
o
Ptot  
Total Dissipation at Tc = 25 C  
40  
W
Derating Factor  
0.27  
100  
W/oC  
m/J  
oC  
oC  
EAS(1) Single Pulse Avalanche Energy  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
(••) Pulse width limitedby safe operating area  
()Current limited by the package  
175  
(1) starting Tj = 25 oC, ID = 15A , VDD = 15V  
1/8  
October 1999  

STD30NF03L 替代型号

型号 品牌 替代类型 描述 数据表
SPD30N03 INFINEON

类似代替

SIPMOS Power Transistor

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