5秒后页面跳转
STB80NF55-08AG PDF预览

STB80NF55-08AG

更新时间: 2024-09-14 14:57:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 1004K
描述
汽车级N沟道55 V、6.5 mOhm典型值、80 A STripFET功率MOSFET,D2PAK封装

STB80NF55-08AG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-263, D2PAK-3/2Reach Compliance Code:compliant
Factory Lead Time:12 weeks风险等级:1.52
雪崩能效等级(Eas):1000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.008 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):320 A
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB80NF55-08AG 数据手册

 浏览型号STB80NF55-08AG的Datasheet PDF文件第2页浏览型号STB80NF55-08AG的Datasheet PDF文件第3页浏览型号STB80NF55-08AG的Datasheet PDF文件第4页浏览型号STB80NF55-08AG的Datasheet PDF文件第5页浏览型号STB80NF55-08AG的Datasheet PDF文件第6页浏览型号STB80NF55-08AG的Datasheet PDF文件第7页 
STB80NF55-08AG,  
STP80NF55-08AG  
Automotive-grade N-channel 55 V, 6.5 mtyp.,80 A STripFET™  
Power MOSFETs in D²PAK and TO-220 packages  
Datasheet — production data  
Features  
Order code  
VDSS  
RDS(on) max ID  
8 m80 A  
TAB  
TAB  
STB80NF55-08AG  
STP80NF55-08AG  
55 V  
3
3
2
1
1
Designed for automotive applications and  
AEC-Q101 qualified  
2
D PAK  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Applications  
Figure 1. Internal schematic diagram  
Switching applications  
'ꢅꢆꢇꢈ7$%ꢉ  
Description  
These Power MOSFETs have been developed  
using STMicroelectronics’ unique STripFET  
process, which is specifically designed to  
minimize input capacitance and gate charge. This  
renders the devices suitable for use as primary  
switch in advanced high-efficiency isolated DC-  
DC converters for telecom and computer  
applications, and applications with low gate  
charge driving requirements.  
*ꢅꢁꢉ  
6ꢅꢊꢉ  
$0ꢀꢁꢂꢃꢄYꢁ  
Table 1. Device summary  
Order code  
Marking  
Packages  
Packing  
STB80NF55-08AG  
STP80NF55-08AG  
B80NF55-08  
P80NF55-08  
D²PAK  
Tape and reel  
Tube  
TO-220  
September 2016  
DocID029701 Rev 1  
1/18  
This is information on a product in full production.  
www.st.com  

与STB80NF55-08AG相关器件

型号 品牌 获取价格 描述 数据表
STB80NF55-08T4 STMICROELECTRONICS

获取价格

N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK
STB80NF55L06 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
STB80NF55L-06 STMICROELECTRONICS

获取价格

N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET
STB80NF55L06T4 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
STB80NF55L-06T4 STMICROELECTRONICS

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
STB80NF55L-08 STMICROELECTRONICS

获取价格

N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PA
STB80NF55L-08-1 ETC

获取价格

N-CHANNEL 55V - 0.0065 OHM - 80A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
STB80NF75L STMICROELECTRONICS

获取价格

N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/
STB80NF75L-1 STMICROELECTRONICS

获取价格

N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/
STB80NF75LT4 STMICROELECTRONICS

获取价格

80A, 75V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3