Datasheet > SSM6P09FU_07

SSM6P09FU_07

更新时间： 2024-09-21 03:14:31

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	163K
描述
High Speed Switching Applications

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数据手册

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SSM6P09FU_07 数据手册

SSM6P09FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM6P09FU

High Speed Switching Applications

Unit: mm

•

Small package

Low Drain-Source ON resistance.

: R = 2.7 Ω (max) (@V

= −10 V)

= −4 V)

: R = 4.2 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

−30

±20

Gate-Source voltage

GSS

−200

−800

300

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

°C

150

JEDEC

JEITA

―

Storage temperature range

stg

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-2J1C

Weight: 6.8 mg (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Figure 1.

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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