SSM6P16FU

更新时间： 2024-11-05 03:50:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	180K
描述
High Speed Switching Applications

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中文翻译

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SSM6P16FU 数据手册

SSM6P16FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM6P16FU

High Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Small package

Low on-resistance : R = 8 Ω (max) (@V

= −4 V)

: R = 12 Ω (max) (@V

= −2.5 V)

= −1.5 V)

: R = 45 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

−20

±10

Gate-Source voltage

GSS

−100

−200

200

1: Source1

Drain current

2: Gate1

3: Drain2

4: Source2

5: Gate2

6: Drain1

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

°C

stg

150

Storage temperature range

−55~150

°C

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2J1C

Weight: 6.8 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit (top view)

D T

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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