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SSM6P35FE

更新时间: 2024-11-05 06:14:11
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 189K
描述
High-Speed Switching Applications Analog Switch Applications

SSM6P35FE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (ID):0.1 A最大漏源导通电阻:11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM6P35FE 数据手册

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SSM6P35FE  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type  
SSM6P35FE  
High-Speed Switching Applications  
Unit: mm  
1.6±0.05  
Analog Switch Applications  
1.2±0.05  
1.2-V drive  
Low ON-resistance : R = 44 (max) (@V  
= -1.2 V)  
= -1.5 V)  
= -2.5 V)  
= -4.0 V)  
on  
GS  
1
2
3
6
: R = 22 (max) (@V  
on  
GS  
GS  
: R = 11 (max) (@V  
on  
5
4
: R  
=
8 (max) (@V  
GS  
on  
Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2)  
Characteristics  
Drain–source voltage  
Symbol  
Rating  
Unit  
V
V
-20  
±10  
V
V
DSS  
1.Source1 4.Source2  
Gate–source voltage  
GSS  
2.Gate1  
3.Drain2  
5.Gate2  
6.Drain1  
ES6  
DC  
I
-100  
D
Drain current  
mA  
Pulse  
I
-200  
DP  
JEDEC  
JEITA  
-
-
Drain power dissipation  
Channel temperature  
Storage temperature  
P (Note 1)  
150  
mW  
°C  
D
T
ch  
150  
T
stg  
55 to 150  
°C  
TOSHIBA  
2-2N1D  
Weight: 3.0 mg (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: Total rating  
Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6
5
4
Q1  
PZ  
Q2  
1
2
3
1
2
3
1
2008-03-14  

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